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Popular Questions - Engineering – Electronic Engineering

engineering

Consider an idealized silicon npn bipolar transistor with the properties listed in Table 6Q9-1. Assume uniform doping in each region. The emitter and base widths are between metallurgical junctions...

engineering

a. Consider three dielectric media with flat and parallel boundaries with refractive indices n1, n2 and n3. Show that for normal incidence the reflection coefficient between layers 1 and 2 is the...

engineering

Spectroscopic ellipsometry measurements on a germanium crystal at a photon energy of 1.5 eV show that the real and imaginary parts of the complex relative permittivity are 21.56 and 2.772...

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